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程序代写案例-ELEC2133
时间：2022-07-10
THE UNIVERSITY OF NEW SOUTH WALES
School of Electrical Engineering and Telecommunication
Home take midterm
2022
ELEC2133
Analogue Electronics
This midterm contributes to 10% of the total assessment of this course
The due date is on Monday July 18, 2022 (11:59pm). Your submissions are to
be submitted on Moodle before the due date and time. Assignments submitted
after this date will attract a penalty of 5% per day.
The take home midterm contains two problems with four parts. The first problem
is the continuation of assignment II. The parts which deal with frequency
response and simulation are included here. The second problem is the modified
version of assignment I. Each problem contains one or more parts. Each part has
been labelled with P, C, D or HD that indicates the level of difficulty. P means
that the question could be attempted by all students and students who answer the
question correctly are at the level of “pass”. C means the question could be
attempted by students who are at the level of “credit” in the course. D and HD
indicate the question could be attempted by students who are at the level of
“Distinction” and “High Distinction”, respectively.
What does this mean?
If you are targeting to pass or get credit in the course, you may only attempt those
P or C types of questions.
If you are happy or targeting to get a distinction, you can attempt those P, C, and
D types of questions.
If you are targeting a to get high distinction, you should attempt all the questions
including HD type of questions.
2
QUESTION 1 [60 Marks]
In the assignment I, you analyzed and designed the charge readout circuit for PZT actuator
shown in Fig 1(a). One of the problems that is encountered in the readout circuit is that the last
stage of the amplifier, which is the non-inverting amplifier, amplifies low-frequency noise from
power supply or the vibration of the actuator due to environmental factors. It also amplifies
any of DC imperfections contributed from the previous stages. Reducing the noise at the output
is important while ensuring the readout signal is amplified. Although there are other
modifications that may be applied to the non-inverting amplifier in order to achieve high signal-
to-noise ratio, the non-inverting amplifier will be replaced by a three-stage transistor amplifier
shown in Fig. 2(a) in this assessment. Your task will be to calculate its bandwidth.
Fig. 1: PZT actuator self-sensing readout circuit
The three-stage amplifier consists of one n-channel MOSFET transistor M1 in depletion
mode with W/L = 1 and two BJT transistors Q1 and Q2. The transistors have the model
parameters as provided in the Table below
Transistor Parameters
M1 Kn = 10mA/V
2 VTN = -2V λ=0.02V-1 Cgs = 3.5pf, Cgd = 0.1pf
Q2 β=150 VA = 80V VBE = 0.7V fT = 2GHz, Cµ= 0.2pf
Q3 β=80 VA = 60V VBE = 0.7V fT = 2GHz, Cµ= 0.2pf
C2
VPZT CPZT
Vin
R1
R2
C1
R5
R3
R4
+V
-V
+V
-V
-V
+V
Vo
PZT Actuator
3
RD2
0.62K
+15V
M1
Vs
RS1
0.2K
RG
1M
Rs
10K
10µF
10µFC2 10µF
C4
R1
78K
R2
22K
RC2
4.7K
RE2
1.6K
C3
10µFC6
R4
120K
RE3
3.3K
C5
Q2 Q3
R3
91K
RL
0.25K
C1
Vo
10µF10µF
Fig. 2: A three-stage transistor amplifier
PART I (Calculating bandwidth)
a) [P,C] Draw small-signal equivalent circuit of the amplifier in the form suitable for
low frequency. [5 marks]
b) [P,C] Calculate the lower 3dB frequency, fL, of the amplifier using the appropriate
time constant method. [15 Marks]
c) [P,C] Draw small-signal equivalent circuit of the amplifier in the form suitable for
high-frequency analysis. [5 Marks]
d) [DN]*Calculate the higher 3dB frequency, fH, of the amplifier using the appropriate
time constant method. [15 Marks]
PART II (LTSpice or Pspice Simulation)
a) [DN] *Simulate Fig. 2 and compare the results with your calculation in assignment II
and Part I. The Spice transistor models will be uploaded on Moodle.
[20 marks]
4
QUESTION 2 [40 Marks]
The Opamp readout circuit you dealt with in assignment I and shown in Fig. 1 is modified to
fig. 3.
Vin
C2
VPZT CPZT
R1
R2
R5
R3
+V
-V
+V
-V
-V
+V
Vo
PZT Actuator
R4
R4
R3
Fig. 3: Modified readout circuit
PART I (Opamp circuit)
a) [P,C] Assuming R1=R2, CPZT =C2, and 5 ≫ |
1
2
|, find the expression of the
output voltage, Vo.
[15 marks]
b) [P,C] In the non-ideal case, all op-amps in Fig. 3 have the following DC
imperfections
Input bias current: IB = 40nA at room temperature
Input offset current: Iio = ±2nA at room temperature
Input offset voltage: Vio = ±2mV at room temperature
Calculate the worst-case output offset voltage at room temperature assuming R5 =
0.5M, R4 = 280K, R3 = 1K, R1=1K, R2=1K, C1 = C2 = CPZT = 10nf.
[25 marks]
School of Electrical Engineering and Telecommunication
Home take midterm
2022
ELEC2133
Analogue Electronics
This midterm contributes to 10% of the total assessment of this course
The due date is on Monday July 18, 2022 (11:59pm). Your submissions are to
be submitted on Moodle before the due date and time. Assignments submitted
after this date will attract a penalty of 5% per day.
The take home midterm contains two problems with four parts. The first problem
is the continuation of assignment II. The parts which deal with frequency
response and simulation are included here. The second problem is the modified
version of assignment I. Each problem contains one or more parts. Each part has
been labelled with P, C, D or HD that indicates the level of difficulty. P means
that the question could be attempted by all students and students who answer the
question correctly are at the level of “pass”. C means the question could be
attempted by students who are at the level of “credit” in the course. D and HD
indicate the question could be attempted by students who are at the level of
“Distinction” and “High Distinction”, respectively.
What does this mean?
If you are targeting to pass or get credit in the course, you may only attempt those
P or C types of questions.
If you are happy or targeting to get a distinction, you can attempt those P, C, and
D types of questions.
If you are targeting a to get high distinction, you should attempt all the questions
including HD type of questions.
2
QUESTION 1 [60 Marks]
In the assignment I, you analyzed and designed the charge readout circuit for PZT actuator
shown in Fig 1(a). One of the problems that is encountered in the readout circuit is that the last
stage of the amplifier, which is the non-inverting amplifier, amplifies low-frequency noise from
power supply or the vibration of the actuator due to environmental factors. It also amplifies
any of DC imperfections contributed from the previous stages. Reducing the noise at the output
is important while ensuring the readout signal is amplified. Although there are other
modifications that may be applied to the non-inverting amplifier in order to achieve high signal-
to-noise ratio, the non-inverting amplifier will be replaced by a three-stage transistor amplifier
shown in Fig. 2(a) in this assessment. Your task will be to calculate its bandwidth.
Fig. 1: PZT actuator self-sensing readout circuit
The three-stage amplifier consists of one n-channel MOSFET transistor M1 in depletion
mode with W/L = 1 and two BJT transistors Q1 and Q2. The transistors have the model
parameters as provided in the Table below
Transistor Parameters
M1 Kn = 10mA/V
2 VTN = -2V λ=0.02V-1 Cgs = 3.5pf, Cgd = 0.1pf
Q2 β=150 VA = 80V VBE = 0.7V fT = 2GHz, Cµ= 0.2pf
Q3 β=80 VA = 60V VBE = 0.7V fT = 2GHz, Cµ= 0.2pf
C2
VPZT CPZT
Vin
R1
R2
C1
R5
R3
R4
+V
-V
+V
-V
-V
+V
Vo
PZT Actuator
3
RD2
0.62K
+15V
M1
Vs
RS1
0.2K
RG
1M
Rs
10K
10µF
10µFC2 10µF
C4
R1
78K
R2
22K
RC2
4.7K
RE2
1.6K
C3
10µFC6
R4
120K
RE3
3.3K
C5
Q2 Q3
R3
91K
RL
0.25K
C1
Vo
10µF10µF
Fig. 2: A three-stage transistor amplifier
PART I (Calculating bandwidth)
a) [P,C] Draw small-signal equivalent circuit of the amplifier in the form suitable for
low frequency. [5 marks]
b) [P,C] Calculate the lower 3dB frequency, fL, of the amplifier using the appropriate
time constant method. [15 Marks]
c) [P,C] Draw small-signal equivalent circuit of the amplifier in the form suitable for
high-frequency analysis. [5 Marks]
d) [DN]*Calculate the higher 3dB frequency, fH, of the amplifier using the appropriate
time constant method. [15 Marks]
PART II (LTSpice or Pspice Simulation)
a) [DN] *Simulate Fig. 2 and compare the results with your calculation in assignment II
and Part I. The Spice transistor models will be uploaded on Moodle.
[20 marks]
4
QUESTION 2 [40 Marks]
The Opamp readout circuit you dealt with in assignment I and shown in Fig. 1 is modified to
fig. 3.
Vin
C2
VPZT CPZT
R1
R2
R5
R3
+V
-V
+V
-V
-V
+V
Vo
PZT Actuator
R4
R4
R3
Fig. 3: Modified readout circuit
PART I (Opamp circuit)
a) [P,C] Assuming R1=R2, CPZT =C2, and 5 ≫ |
1
2
|, find the expression of the
output voltage, Vo.
[15 marks]
b) [P,C] In the non-ideal case, all op-amps in Fig. 3 have the following DC
imperfections
Input bias current: IB = 40nA at room temperature
Input offset current: Iio = ±2nA at room temperature
Input offset voltage: Vio = ±2mV at room temperature
Calculate the worst-case output offset voltage at room temperature assuming R5 =
0.5M, R4 = 280K, R3 = 1K, R1=1K, R2=1K, C1 = C2 = CPZT = 10nf.
[25 marks]
