2022/12/13 12:00 HKUST Canvas - Bi-weekly Quiz 01: ELEC3500 (L1) - Microelectronic Devices and Technology
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Bi-weekly Quiz 01
Due Sep 20 at 10:45am Points 6 Questions 2
Available after Sep 20 at 10:35am Time Limit 10 Minutes
Attempt History
Attempt Time Score
LATEST Attempt 1 10 minutes 5 out of 6
 Correct answers are hidden.
Score for this quiz: 5 out of 6
Submitted Sep 20 at 10:45am
This attempt took 10 minutes.
4 / 4 ptsQuestion 1
Answer 1:
Partial
The effective density of states of a piece of silicon is =4∗10 in
the conduction band at room temperature. Assume the intrinsic carrier
concentration is 10 . Suppose 0.25% of the equivalent states in
the conduction band are filled by electrons at room temperature.
a) What is the doping concentration in the silicon per cm ?
1e17
b) What is the electron concentration in the silicon per cm ?
1e17
c) What is the hole concentration in the silicon per cm ?
1e3
d) What is the value of the Fermi-Dirac function ( ) at the
conduction band edge? 1/400

19 −3

10 −3
3
3
3

2022/12/13 12:00 HKUST Canvas - Bi-weekly Quiz 01: ELEC3500 (L1) - Microelectronic Devices and Technology
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Answer 2:
Answer 3:
Answer 4:
1e17
1e17
1e3
1/400
1 / 2 ptsQuestion 2Partial
The Fermi-Dirac distribution of electrons for silicon with n-type dopant
at room temperature is indicated with the figure given below.
1) When the n-type dopants are increased by 10 times, which of the
following figure with the red line indicates the corresponding change in
the Fermi-Dirac distribute relative to the original distribution in gray?
(2)

2022/12/13 12:00 HKUST Canvas - Bi-weekly Quiz 01: ELEC3500 (L1) - Microelectronic Devices and Technology
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Answer 1:
Answer 2:
2) Now back to the original n-type silicon. Instead of increasing the n-
type dopants, the temperature is reduced significantly. Which of the
above figure with the red line indicates the corresponding change in the
Fermi-Dirac distribute relative to the original distribution in gray?
(1)
(2)
(1)
Quiz Score: 5 out of 6