Item Symbol Unit
Drain-Source Voltage VDS V4.0
Gate-Source Voltage VGS V-3.0
Total Power Dissipation Pt* mW290
Storage Temperature Tstg °C-65 to +175
Channel Temperature Tch °C175
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
*Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 3 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.075 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS 15 40 85
40 60 -
-0.2
-
-1.0 -2.0
1.2 1.6
-3.0 - -
8.5 10.0 -
VDS = 2V, IDS = 1mA
VDS = 3V, IDS = 10mA
f = 12GHz
VDS = 2V, IDS = 10mA
VDS = 2V, VGS = 0V
IGS = -10µA
mA
mS
V
dB
dB
V
gm
Vp
VGSO
NF
Gas
Test Conditions UnitLimitTyp. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Note: RF parameters are measured on a sample basis as follows:
Lot qty. Sample qty. Accept/Reject
1200 or less 125 (0,1)
1201 to 3200 200 (0,1)
3201 to 10000 315 (1,2)
10001 or over 500 (1,2)
AVAILABLE CASE STYLES: LG
Channel to CaseThermal Resistance - 220 300 °C/WRth
FEATURES
• Low Noise Figure: 1.2B (Typ.)@f=12GHz
• High Associated Gain: 10.0dB (Typ.)@f=12GHz
• Lg ≤ 0.25µm, Wg = 280µm
• Gold Gate Metallization for High Reliability
• Cost Effective Ceramic Microstrip (SMT) Package
• Tape and Reel Packaging Available
DESCRIPTION
The FHX35LG is a High Electron Mobility Transistor(HEMT) intended for
general purpose, low noise and high gain amplifiers in the 2-18GHz
frequency range. This device is packaged in cost effective, low parasitic,
hermetically sealed(LG) or epoxy-sealed(LP) metal-ceramic packages for
high volume telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
1
Edition 1.2
October 2004
FHX35LG
Super Low Noise HEMT
2FHX35LG
Super Low Noise HEMT
POWER DERATING CURVE
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
100
50
150
200
250
300
00 50 100 150
LG
200
1
0
2 3
Ambient Temperature (°C)
Drain-Source Voltage (V)
To
ta
l P
ow
er
D
is
si
pa
tio
n
(m
W
)
30
40
50
20
10
D
ra
in
C
ur
re
nt
(m
A)
VGS =0V
-0.2V
-0.6V
-0.8V
-1.0V
-0.4V
3FHX35LG
Super Low Noise HEMT
Gas
OUTPUT POWER vs. INPUT POWER
f=12GHz
VDS=3V
IDS=15mA
-5 0 5 10
Input Power (dBm)
15
25
10
5
O
ut
pu
t P
ow
er
(d
Bm
)
As
so
ci
at
ed
G
ai
n
(dB
)
NF & Gas vs. TEMPERATURE
f=12GHz
VDS=3VIDS=10mA
100 2000 300 400
Ambient Temperature (°K)
2.0
1.5
1.0
15
10
5
N
oi
se
F
ig
ur
e
(dB
)
NF & Gas vs. IDS
f=12GHz
VDS=3V
VDS=3V
IDS=10mA
12
10
8
7
9
11
10 20 30
Drain Current (mA)
N
oi
se
F
ig
ur
e
(dB
)
As
so
ci
at
ed
G
ai
n
(dB
)
NF & Gas vs. FREQUENCY
2
1
3
2
1
3
0
10
5
15
20
0
4 6 8 10 12 2018
Frequency (GHz)
N
oi
se
F
ig
ur
e
(dB
)
As
so
ci
at
ed
G
ai
n
(dB
)
NF
Gas
Gas
NF
NF
4f = 12 GHz
VDS = 2V
IDS = 10mA
Γopt = 0.56∠175°
Rn/50 = 0.08
NFmin = 1.2dB
TYPICAL NOISE FIGURE CIRCLE
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j100
-j250
Γopt 2.0
2.5
3.0
1.5
20
15
10
5
0
20
15
10
5
0
4 6 8 10 12 20
VDS = 3V
IDS = 15mA
Ga(max)
Frequency (GHz)
Ga(max) AND |S21|2 vs. FREQUENCY
FHX35LG
G
ai
n
(dB
)
|S21|2
NOISE PARAMETERS
FHX35LG
VDS = 3V, IDS = 10mA
Freq.
(GHz)
Γopt
(MAG) (ANG)
NFmin
(dB) Rn/50
2
4
6
8
10
12
14
16
18
0.81
0.74
0.69
0.64
0.60
0.56
0.53
0.50
0.48
32
63
93
127
148
175
-162
-139
-117
0.40
0.50
0.68
0.86
1.03
1.20
1.38
1.54
1.70
0.58
0.42
0.30
0.20
0.12
0.08
0.08
0.10
0.14
NOISE PARAMETERS
FHX35LP
VDS = 3V, IDS = 10mA
Freq.
(GHz)
Γopt
(MAG) (ANG)
NFmin
(dB) Rn/50
2
4
6
8
10
12
14
16
18
0.85
0.76
0.69
0.62
0.55
0.50
0.45
0.42
0.39
30
55
81
109
138
168
-160
-126
-92
0.40
0.50
0.68
0.86
1.03
1.20
1.38
1.54
1.70
0.29
0.26
0.19
0.12
0.06
0.04
0.06
0.13
0.22
FHX35LG
Super Low Noise HEMT
5+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
S11
S22
180°
+90°
0°
-90°
S21
S12
SCALE FOR |S21|
SC
AL
E
FO
R
|S 1
2|
.04
.08
.12
.16
2 134
4
8
4
12 8
12
0.1 GHz
0.1 GHz
20 GHz
20 GHz
20 GHz
20 GHz
12
12
8
8
4
4
10025 50Ω
0.1GHz
0.1 GHz
S-PARAMETERS
VDS = 3V, IDS = 10mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
100 .996 -3.5 4.576 177.2 .002 81.2 .516 -2.5
500 .994 -12.1 4.548 169.0 .012 79.3 .517 -10.2
1000 .982 -23.5 4.471 158.5 .023 73.1 .513 -19.9
2000 .950 -44.7 4.304 139.3 .043 57.9 .498 -38.0
3000 .912 -64.6 4.026 121.0 .059 44.6 .483 -54.9
4000 .867 -84.0 3.742 103.1 .071 31.8 .462 -71.9
5000 .821 -101.6 3.436 86.6 .079 20.0 .446 -87.6
6000 .783 -117.5 3.132 71.6 .085 9.8 .439 -102.2
7000 .757 -130.9 2.881 57.9 .087 0.9 .441 -115.3
8000 .738 -142.8 2.659 45.0 .088 -7.1 .452 -126.7
9000 .726 -153.8 2.497 32.4 .090 -15.3 .468 -136.9
10000 .707 -164.5 2.347 20.2 .092 -21.7 .480 -146.1
11000 .680 -174.1 2.206 8.4 .090 -27.8 .494 -156.0
12000 .654 176.1 2.101 -3.4 .090 -35.5 .503 -164.8
13000 .638 166.0 2.035 -15.1 .091 -42.6 .514 -173.8
14000 .626 157.1 2.003 -26.2 .093 -49.6 .537 178.4
15000 .607 147.8 1.975 -37.6 .094 -55.8 .559 171.0
16000 .565 138.4 1.917 -50.1 .097 -64.7 .564 162.7
17000 .528 127.2 1.924 -62.9 .102 -73.3 .567 154.4
18000 .484 112.8 1.966 -77.1 .109 -86.2 .572 142.7
19000 .421 93.5 1.932 -91.7 .116 -96.2 .581 133.1
20000 .380 74.2 1.991 -107.4 .127 -110.9 .547 124.3
FHX35LG
Super Low Noise HEMT
60.5
(0.02)
1.
0
(0.
03
9)
1.
3
M
ax
(0.
05
1)
0.
1
(0.
00
4)
1.5±0.3
(0.059)
1.78±0.15
(0.07)
1.5±0.3
(0.059)
4.78±0.5
Case Style "LG"
Metal-Ceramic Package
Unit: mm(inches)
1. Gate
2. Source
3. Drain
4. Source
1.5±0.3
(0.059)
1.78±0.15
(0.07)
1.5±0.3
(0.059)
4.78±0.5
Gold Plated Leads
1
2
3
4
FHX35LG
Super Low Noise HEMT
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.